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The role of two defects in the ambipolar character of nanocrystalline selenium poor Sb2Se3 is studied. At low temperature, the electrical transport in Sb2Se3 thin films with nm‐sized crystallites and grains is dominated by the ionization of a shallow acceptor, while at high temperature a deep donor is the leading one. The ionization energy of the deep donor agrees with theoretical reports for selenium vacancies. However, the value of the ionization energy of the shallow acceptor is in contradiction with theoretical reports pointing out to an unreported shallow defect. These findings have been confirmed by two independent experimental techniques, Electron Paramagnetic Resonance, and electrical transport as a function of temperature. The mobility of the free carriers has been found not to be limited by grain potential barriers (GPB), in contrast with polycrystalline thin films. Both findings, new shallow acceptor and zero height GPB, constitute advantages for the design of nanostructured Sb2Se3‐based solar cells and other optoelectronic devices. These results not only provide useful information for the growth of nanocrystalline Sb2Se3 thin films with ambipolar transport properties, but also about the complexity of defect physics in low‐symmetry and Q1D semiconductors. [ABSTRACT FROM AUTHOR]

Abstract The role of two defects in the ambipolar character of nanocrystalline selenium poor Sb2Se3 is studied. At low temperature, the electrical transport in Sb2Se3 thin films with nm‐sized crystallites and grains is dominated by the ionization of a shallow acceptor, while at high temperature a deep donor is the leading one. The ionization energy of the deep donor agrees with theoretical reports for selenium vacancies. However, the value of the ionization energy of the shallow acceptor is in contradiction with theoretical reports pointing out to an unreported shallow defect. These findings have been confirmed by two independent experimental techniques, Electron Paramagnetic Resonance, and electrical transport as a function of temperature. The mobility of the free carriers has been found not to be limited by grain potential barriers (GPB), in contrast with polycrystalline thin films. Both findings, new shallow acceptor and zero height GPB, constitute advantages for the design of nanostructured Sb2Se3‐based solar cells and other optoelectronic devices. These results not only provide useful information for the growth of nanocrystalline Sb2Se3 thin films with ambipolar transport properties, but also about the complexity of defect physics in low‐symmetry and Q1D semiconductors.

To realize single‐molecule field‐effect transistors, a crucial test for evaluating the integrity of single‐molecule electronics into conventional circuit architectures, remains elusive. Though interfacial effect is widely accepted to be crucially important in electronic devices, rare reports have studied fine control of the interface in single‐molecule transistors. Through molecular engineering, different numbers of methylene groups are incorporated between the diketopyrrolopyrrole (DPP) kernel and anchor groups (AMn‐DPP, n = 0−3), and how the molecule–electrode interface affects the performance of single‐molecule transistors is investigated. Both experimental and theoretical data demonstrate that p‐type charge transport dominates in AM0‐DPP and AM1‐DPP single‐molecule transistors, while AM2‐DPP and AM3‐DPP systems exhibit ambipolar field‐effect behaviors, which is attributed to the HOMO‐pinning effect in AM0‐DPP and AM1‐DPP molecular junctions. Theoretical calculations show that the parity of the methylene number results in two different connection symmetries between the DPP kernel and graphene electrodes, and thus different electronic interactions, leading to different relative molecular energy‐level alignments form those of isolated molecules, which has never been reported before. These results provide crucial information for precise control of the interfaces in molecular junctions, new insight into building multifunctional graphene–organic hybrid electronic devices, and the design of functional organic materials. [ABSTRACT FROM AUTHOR]

The Seebeck coefficient of both electrons and holes in a family of ambipolar diketopyrrolopyrrole copolymers is investigated using field-effect gated measurements. It is found that at high carrier concentrations the magnitude of the Seebeck coefficients is not strongly dependent on the molecular structure of the backbone within this family of polymers. Additionally, the Seebeck coefficients of electrons and holes have very similar magnitudes showing that electrons and holes experience a similar energetic landscape. Subtle differences in the carrier concentration dependence between the polymers are observed, which are interpreted in terms of different degrees of energetic disorder on the basis of molecular dynamics and electronic structure simulations. [ABSTRACT FROM AUTHOR]