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Sodium metal batteries have emerged as potential rivals to lithium‐ion batteries. Nevertheless, maintaining a stable sodium metal anode under harsh conditions (current density >10 mA cm−2) is extremely challenging. The primary issue is the highly reactive sodium metal continuously reacts with the electrolyte to form a thick and loose solid electrolyte film. The tip effect causes sodium ions (Na+) accumulated in the bulge resulting in uneven deposition. In this paper, a unique artificial interfacial layer (Ag nanoparticles distributed in NaClO4‐based matrix) is prepared on the surface of a metallic sodium anode using in situ displacement reaction. Ag particles arranged at the bottom of the artificial layer act as effective nucleation sites helping Na+ deposit uniformly, while the built‐in electric field formed between Ag in the middle/top of the artificial layer and the sodium accelerates the migration of Na+ in the interfacial layer during the deposition and reduce the polarization. Such important properties further allow the steady operation of modified sodium metal batteries in very harsh conditions. The symmetric battery achieves reversible stripping/plating for over 1000 h under high current density (10 mA cm−2). Moreover, the full cell coupled with a high‐loading Na3V2(PO4)3 cathode (20 mg cm−2) presents a stable cycle performance. [ABSTRACT FROM AUTHOR]

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface‐sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large‐area synthesis and controllable thermal oxidation behavior toward single‐crystal native oxides. This shows that surface‐adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer‐by‐layer manner with a low‐stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible‐light transparency and is compatible with wet‐chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar‐integrated functional nanoelectronics such as tunnel junction devices, field‐effect transistors, and memristors. [ABSTRACT FROM AUTHOR]