1. Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application
- Author
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Xu, Hu, Zhang, Haima, Liu, Yawen, Zhang, Simeng, Sun, Yangye, Guo, Zhongxun, Sheng, Yaochen, Wang, Xudong, Luo, Chen, Wu, Xing, Wang, Jianlu, Hu, Weida, Xu, Zihan, Sun, Qingqing, Zhou, Peng, Shi, Jing, Sun, Zhengzong, Zhang, David Wei, and Bao, Wenzhong
- Subjects
controlled doping ,field effect transistors ,PtSe2 ,transition metal dichalcogenides ,Physical Sciences ,Chemical Sciences ,Engineering ,Materials - Abstract
Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer-scale continuous few-layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n-doping and p-doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top-gated field effect transistors (FETs). The device current on/off ratio is optimized in two-layer PtSe2 FETs, and four-terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm2 V−1 s−1 for p-type and n-type FETs, respectively) with a nearly symmetric p-type and n-type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications.
- Published
- 2019