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The field of bioelectronics with the aim to contact cells, cell clusters, biological tissues and organoids has become a vast enterprise. Currently, it is mainly relying on classical micro‐ and nanofabrication methods to build devices and systems. Very recently the field is highly pushed by the development of novel printable organic, inorganic and biomaterials as well as advanced digital printing technologies such as laser and inkjet printing employed in this endeavor. Recent advantages in alternative additive manufacturing and 3D printing methods enable interesting new routes, in particular for applications requiring the incorporation of delicate biomaterials or creation of 3D scaffold structures that show a high potential for bioelectronics and building of hybrid bio‐/inorganic devices. Here the current state of printed 2D and 3D electronic structures and related lithography techniques for the interfacing of electronic devices with biological systems are reviewed. The focus lies on in vitro applications for interfacing single cell, cell clusters, and organoids. Challenges and future prospects are discussed for all‐printed hybrid bio/electronic systems targeting biomedical research, diagnostics, and health monitoring. [ABSTRACT FROM AUTHOR]

Printed electronics including large‐area sensing, wearables, and bioelectronic systems are often limited to simple circuits and hence it remains a major challenge to efficiently store data and perform computational tasks. Memristors can be considered as ideal candidates for both purposes. Herein, an inkjet‐printed memristor is demonstrated, which can serve as a digital information storage device, or as an artificial synapse for neuromorphic circuits. This is achieved by suitable manipulation of the ion species in the active layer of the device. For digital‐type memristor operation resistive switching is dominated by cation movement after an initial electroforming step. It allows the device to be utilized as non‐volatile digital memristor, which offers high endurance over 12 672 switching cycles and high uniformity at low operating voltages. To use the device as an electroforming‐free, interface‐based, analog‐type memristor, anion migration is exploited which leads to volatile resistive switching. An important figure of merits such as short‐term plasticity with close to biological synapse timescales is demonstrated, for facilitation (10–177 ms), augmentation (10s), and potentiation (35 s). Furthermore, the device is thoroughly studied regarding its metaplasticity for memory formation. Last but not least, the inkjet‐printed artificial synapse shows non‐linear signal integration and low‐frequency filtering capabilities, which renders it a good candidate for neuromorphic computing architectures, such as reservoir computing. [ABSTRACT FROM AUTHOR]