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Recently, Kovalenko and co-workers and Li and co-workers developed CsPbX3 (X = Cl, Br, I) inorganic perovskite quantum dots (IPQDs), which exhibited ultrahigh photoluminescence (PL) quantum yields (QYs), low-threshold lasing, and multicolor electroluminescence. However, the usual synthesis needs high temperature, inert gas protection, and localized injection operation, which are severely against applications. Moreover, the so unexpectedly high QYs are very confusing. Here, for the first time, the IPQDs' room-temperature (RT) synthesis, superior PL, underlying origins and potentials in lighting and displays are reported. The synthesis is designed according to supersaturated recrystallization (SR), which is operated at RT, within few seconds, free from inert gas and injection operation. Although formed at RT, IPQDs' PLs have QYs of 80%, 95%, 70%, and FWHMs of 35, 20, and 18 nm for red, green, and blue emissions. As to the origins, the observed 40 meV exciton binding energy, halogen self-passivation effect, and CsPbX3@X quantum-well band alignment are proposed to guarantee the excitons generation and high-rate radiative recombination at RT. Moreover, such superior optical merits endow them with promising potentials in lighting and displays, which are primarily demonstrated by the white light-emitting diodes with tunable color temperature and wide color gamut. [ABSTRACT FROM AUTHOR]

Structure reorganization within perovskite materials has attracted much attention due to its assisted appealing features in optoelectronic devices, such as achieving continue‐wave laser and performance enhancement in photovoltaic devices. Unfortunately, the difficulty of controlling reorganization processing and unclear underlying mechanisms impose an impediment for taking advantage of the structural reorganization in pursuit of distinctive functions in perovskite‐based devices. In this work, using above‐bandgap illumination with a small energy threshold (1.6 mW cm−2) triggering phase transition from orthorhombic to tetragonal in CsPbBr3 is first reported. This photon‐induced structure reorganization is reversible and presents a fast and controllable response (<0.5 s) to light on/off. Raman spectroscopy and density functional theory calculations reveal that such a dynamic structure reorganization is caused by the transition of torsion direction in Pb–Br octahedral, while the diffusion potential difference induced local Coulombic field is proved to drive this process. The findings provide a deep understanding for universal structure reorganization under irradiation in perovskite materials and encourage further study of the novel functions associated with structure reorganization inducing temporal behaviors in optoelectronic devices, for example variations in dielectric constant and band edge fluctuation induced Rashba effects, which show a significant influence on perovskite‐based optoelectronic devices. Photon‐induced reversible phase transition in CsPbBr3 perovskite with a small energy threshold of 1.6 mW cm−2 is first demonstrated in this work. Systematic investigations indicate the diffusion potential difference due to an unbalance between the photon generated electron and hole provides the energy to drive the phase transition. [ABSTRACT FROM AUTHOR]

Recently, inorganic cesium–lead halide perovskites with high thermal stability have attracted much attention as promising light‐emitting material for research of perovskite‐based light‐emitting diodes (PeLEDs) toward high‐definition displays. However, the CsPbI3‐based red PeLEDs still suffer low external quantum efficiency (EQE) and poor device stability due to the spontaneous phase transition from cubic CsPbI3 (α‐CsPbI3) to nonradiative orthorhombic phase (δ‐CsPbI3) under ambient conditions. Here, a feasible approach is reported on phase engineering by incorporating the long‐chain cation (e.g., 2‐(naphthalene‐1‐yl)ethanamine (NEA)) in CsPbI3 for stable and high‐performance CsPbI3‐based red light‐emitting diodes (LEDs). A high EQE of 8.65% is successfully achieved for the characteristic red emission at ≈682 nm representing the highest value among Cs‐based red PeLEDs up to now. More importantly, the corresponding PeLEDs exhibit outstanding stability with EQE retaining 90% after 3 months of storage. These results verify the potential of using cesium‐based inorganic perovskite as viable alternatives to methylammonium (MA)‐ or formamidinium (FA)‐based perovskite for desirable practical applications. Stable α‐CsPbI3 is synthesized by incorporating cation 2‐(naphthalene‐1‐yl)ethanamine (NEA) for perovskite‐based light‐emitting diodes (PeLED). A high external quantum (EQE) of 8.65% is successfully demonstrated for the characteristic red emission ≈682 nm representing the highest value among Cs‐based red PeLEDs up to now. More importantly, corresponding PeLEDs exhibit outstanding stability with EQE retaining 90% after 3 months storage. [ABSTRACT FROM AUTHOR]