Search

Surface or interface engineering is one of the most effective strategies to improve the device performance and stability of perovskite solar cells (PSCs), owing to the fact that the defects are mainly located at the surface. Organosilanes are among the most promising surface modifiers due to their unique cross‐linking ability, which makes a robust layer to further protect the underneath perovskites. However, the influence of tail functional groups of organosilanes on the device performance and stability has never been systematically investigated. Herein, a series of organosilanes with different chain lengths, fluorination, and different interactions toward perovskite are applied to modify the perovskite. Tail functional groups that show passivation ability toward perovskite are demonstrated to effectively reduce trap densities and thus improve the power conversion efficiencies (PCEs), while the fluorinated functional groups are beneficial for high stability. Finally, PSCs based on 3,3,3‐trifluoropropyltrimethoxysilane (FPTMS) modification showed a high PCE of 23.0% with the best operational stability. The encapsulated device maintained 85% of the initial PCE after 1725 h under continuous 1 sun equivalent illumination in air. The work may provide important insights into designing modifiers for high‐performance PSCs with high stability. [ABSTRACT FROM AUTHOR]

2D Dion–Jacobson (2D DJ) perovskites are considered as promising photovoltaic materials due to their structural stability and spacer designability. Here, a spacer cation with an aromatic imidazole ring, 2‐(1H‐imidazol‐2‐yl)ethylammonium (HE), is successfully applied to construct 2D DJ perovskite. It's found that the high polarity of the HE spacer strengthens the interaction between organic and inorganic layers and reduces the exciton binding energy to 67.8 meV, resulting in promoted charge dissociation, compared with the aliphatic 1,4‐butanediammonium (BDA) spacer with a similar length. The HE spacer enlarges the micelle size in precursor solution and suppresses the formation of low‐n value phases. In consequence, the HE‐based perovskite film exhibits better quality than the BDA‐based one, with lower defect density and longer carrier lifetime. The optimized device based on (HE)(MA0.75FA0.25)4Pb5I16 film achieves a champion power conversion efficiency up to 18.40%, much higher than that of the BDA‐based device (15.03%). Besides, the unencapsulated device based HE exhibits improved moisture and thermal stability. [ABSTRACT FROM AUTHOR]