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Electronics that are capable of destroying themselves, on demand and in a harmless way, might provide the ultimate form of data security. This paper presents materials and device architectures for triggered destruction of conventional microelectronic systems by means of microfluidic chemical etching of the constituent materials, including silicon, silicon dioxide, and metals (e.g., aluminum). Demonstrations in an array of home-built metal-oxide-semiconductor field-effect transistors that exploit ultrathin sheets of monocrystalline silicon and in radio-frequency identification devices illustrate the utility of the approaches. [ABSTRACT FROM AUTHOR]

Stretchable electronic devices that exploit inorganic materials are attractive due to their combination of high performance with mechanical deformability, particularly for applications in biomedical devices that require intimate integration with human body. Several mechanics and materials schemes have been devised for this type of technology, many of which exploit deformable interconnects. When such interconnects are fully bonded to the substrate and/or encapsulated in a solid material, useful but modest levels of deformation (<30-40%) are possible, with reversible and repeatable mechanics. Here, the use of prestrain in the substrate is introduced, together with interconnects in narrow, serpentine shapes, to yield significantly enhanced (more than two times) stretchability, to more than 100%. Fracture and cyclic fatigue testing on structures formed with and without prestrain quantitatively demonstrate the possible enhancements. Finite element analyses (FEA) illustrates the effects of various material and geometric parameters. A drastic decrease in the elastic stretchability is observed with increasing metal thickness, due to changes in the buckling mode, that is, from local wrinkling at small thicknesses to absence of such wrinkling at large thicknesses, as revealed by experiment. An analytic model quantitatively predicts the wavelength of this wrinkling, and explains the thickness dependence of the buckling behaviors. [ABSTRACT FROM AUTHOR]

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. [ABSTRACT FROM AUTHOR]