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The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H

The solution-processed solar cells based on colloidal quantum dots (QDs) reported so far generally suffer from poor thickness tolerance and it is difficult for them to be compatible with large-scale solution printing technology. However, the recently emerged perovskite QDs, with unique high defect tolerance, are particularly well-suited for efficient photovoltaics. Herein, efficient CsPbI3 perovskite QD solar cells are demonstrated first with over 1 µm-thick active layer by developing an internal P/N homojunction. Specifically, an organic dopant 2,2'-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6TCNNQ) is introduced into CsPbI3 QD arrays to prepare different carrier-type QD arrays. The detailed characterizations reveal successful charge-transfer doping of QDs and carrier-type transformation from n-type to p-type. Subsequently, the P/N homojunction perovskite QD solar cell is assembled using different carrier-type QDs, delivering an enhanced power conversion efficiency of 15.29%. Most importantly, this P/N homojunction strategy realizes remarkable thickness tolerance of QD solar cells, showing a record high efficiency of 12.28% for a 1.2 µm-thick QD active-layer and demonstrating great potential for the future printing manufacturing of QDs solar cells.

Four structural isomers of non-peripheral tetrahexyl-substituted vanadyl phthalocyanine can be easily separated using common laboratory column chromatography on a gram scale. The most abundant isomer, 1,8,18,22-tetrahexyl vanadyl phthalocyanine (I-3), adopts intermolecular 2D cofacial pi-pi stacking and exhibits a field-effect mobility of up to 0.13 cm(2) V(-1) s(-1).

An efficient organic solar cell is fabricated by the weak-epitaxy-growth method and the achieved power conversion efficiency is over 3% (see figure). A Single-crystal-like thin film improves the carrier mobility and reduces the electron hole recombination. Deposition of a zinc phthalocyanine (ZnPc):C60 mixed layer at 100 degrees C results in a better interpenetrating interface and the device performance is improved.

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO2 sensor based on 6,13-bis(triisopropylsilylethynyl)­pentacene (TIPS-petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors.