1. Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
- Author
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Hsueh Hsing Liu, Jui Wei Hus, Tzu Chiao Wei, Ming Jui Lee, Jr-Hau He, Jen-Inn Chyi, Chien Chia Chen, Chuan-Pu Liu, Kun Yu Lai, and Michael R. S. Huang
- Subjects
Silicon ,Nanotubes ,Materials science ,Nanostructure ,business.industry ,Electrical Equipment and Supplies ,Mechanical Engineering ,Gallium ,Buffer (optical fiber) ,Si substrate ,Mechanics of Materials ,Nano ,Nanotechnology ,Optoelectronics ,General Materials Science ,Nanorod ,Wafer ,business ,Layer (electronics) ,Quantum well - Abstract
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
- Published
- 2015
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