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Electroluminescence from quantum dots (QDs) is a suitable photon source for futuristic displays offering hyper-realistic images with free-form factors. Accordingly, a nondestructive and scalable process capable of rendering multicolored QD patterns on a scale of several micrometers needs to be established. Here, nondestructive direct photopatterning for heavy-metal-free QDs is reported using branched light-driven ligand crosslinkers (LiXers) containing multiple azide units. The branched LiXers effectively interlock QD films via photo-crosslinking native aliphatic QD surface ligands without compromising the intrinsic optoelectronic properties of QDs. Using branched LiXers with six sterically engineered azide units, RGB QD patterns are achieved on the micrometer scale. The photo-crosslinking process does not affect the photoluminescence and electroluminescence characteristics of QDs and extends the device lifetime. This nondestructive method can be readily adapted to industrial processes and make an immediate impact on display technologies, as it uses widely available photolithography facilities and high-quality heavy-metal-free QDs with aliphatic ligands.

Following early research efforts devoted to achieving excellent sensitivity of electronic skins, recent design schemes for these devices have focused on strategies for transduction of spatially resolved sensing data into straightforward user-adaptive visual signals. Here, a material platform capable of transducing mechanical stimuli into visual readout is presented. The material layer comprises a mixture of an ionic transition metal complex luminophore and an ionic liquid (capable of producing electrochemiluminescence (ECL)) within a thermoplastic polyurethane matrix. The proposed material platform shows visco-poroelastic response to mechanical stress, which induces a change in the distribution of the ionic luminophore in the film, which is referred to as the piezo-ionic effect. This piezo-ionic effect is exploited to develop a simple device containing the composite layer sandwiched between two electrodes, which is termed "ECL skin". Emission from the ECL skin is examined, which increases with the applied normal/tensile stress. Additionally, locally applied stress to the ECL skin is spatially resolved and visualized without the use of spatially distributed arrays of pressure sensors. The simple fabrication and unique operation of the demonstrated ECL skin are expected to provide new insights into the design of materials for human-machine interactive electronic skins.

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2) ) and on/off current ratios (>10(4) ) in a narrow voltage window (

The nature of repetitive learning and oblivion of memory enables humans to effectively manage vast amounts of memory by prioritizing information for long-term storage. Inspired by the memorization process of the human brain, an artificial synaptic array is presented, which mimics the biological memorization process by replicating Ebbinghaus' forgetting curve. To construct the artificial synaptic array, signal-transmitting access transistors and artificial synaptic memory transistors are designed using indium-gallium-zinc-oxide and poly(3-hexylthiophene), respectively. To secure the desired performance of the access transistor in regulating the input signal to the synaptic transistor, the content of gallium in the access transistor is optimized. In addition, the operation voltage of the synaptic transistor is carefully selected to achieve memory-state efficiency. Repetitive learning characterizing Ebbinghaus' oblivion curves is realized using an artificial synaptic array with optimized conditions for both transistor components. This successfully demonstrates a biologically plausible memorization process. Furthermore, selective attention for information prioritization in the human brain is mimicked by selectively applying repetitive learning to a synaptic transistor with a high memory state. The demonstrated biologically plausible artificial synaptic array provides great scope for advancement in bioinspired electronics.

Incorporation of various functions of a biological nervous system into electronic devices is an intriguing challenge in the realization of a human-like recognition and response system. Emerging artificial synaptic devices capable of processing electronic signals through neuromorphic functions operate such biomimetic systems similarly to biological nervous systems. Here, an oxygen-sensitive artificial synaptic device that simultaneously detects oxygen concentration and generates a synaptic signal is demonstrated. The device successfully achieves an interconversion between the excitatory and inhibitory modes of the synaptic current at various oxygen concentrations by virtue of an oxygen-sensitive trilayered organic double heterojunction. The oxygen-induced traps in the organic layer modulate the majority charge carrier from holes to electrons, and this modulation induces an interconversion between the excitatory and inhibitory modes according to the environmental oxygen condition. Finally, the proposed synaptic device is applied to the realization of a negative feedback system for regulation of oxygen homeostasis, which mimics the human autonomic nervous system. The oxygen-sensitive synaptic device proposed in this study is expected to open up new possibilities for the development of a biomimetic neural system that can respond appropriately to various environmental changes.

) and its dep-osition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for trans-parent applications, and transparency is one of the key issues for future display technology. Consequently, in a search for alterna-tives for amorphous silicon, considerable interest has focused on metal oxide semiconductors, such as In, Ga, or Zn oxides, as these exhibit high optical transparencies, and have excel-lent electrical properties with high electron mobility, chemical stability, and solution processability. For example, ZnO-based semiconductors have been successfully incorporated into var-ious electronic devices, such as electron transfer layers for solar cells