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Dr. Q. Sun, B. J. Kim, Prof. S.-W. Kim, Prof. J. H. Cho SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 440-746 , South Korea E-mail: kimsw1@skku.edu; jhcho94@skku.edu W. Seung, Prof. S.-W. Kim School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 440-746 , South Korea Prof. J. H. Cho School of Chemical Engineering Sungkyunkwan University Suwon 440-746 , South Korea Prof. S. Seo College of BioNano Technology Gachon University Seongnam 461-701 , South Korea

Recently, 2D materials exhibit great potential for humidity sensing applications due to the fact that almost all atoms are at the surface. Therefore, the quality of the material surface becomes the key point for sensitive perception. This study reports an integrated, highly sensitive humidity sensors array based on large-area, uniform single-layer molybdenum disulfide with an ultraclean surface. Device mobilities and on/off ratios decrease linearly with the relative humidity varying from 0% to 35%, leading to a high sensitivity of more than 104. The reversible water physisorption process leads to short response and decay times. In addition, the device array on a flexible substrate shows stable performance, suggesting great potential in future noncontact interface localization applications.

A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1) , and excellent mechanical durability over 2500 cycles.

Electric double layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely large local electric field that gives a highly efficient charge carrier control in the semiconductor channel. To achieve highly efficient triboelectric potential gating on the FET and explore diversified applications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed to bridge triboelectric potential modulation and ion-controlled semiconductor devices. Utilizing the triboelectric potential instead of applying an external gate voltage, the triboiontronic MoS2 transistor is efficiently operated owing to the formation of EDLs in the ion-gel dielectric layer. The operation mechanism of the triboiontronic transistor is proposed, and high current on/off ratio over 107 , low threshold value (75 μm), and steep switching properties (20 µm dec-1 ) are achieved. A triboiontronic logic inverter with desirable gain (8.3 V mm-1 ), low power consumption, and high stability is also demonstrated. This work presents a low-power-consuming, active, and a general approach to efficiently modulate semiconductor devices through mechanical instructions, which has great potential in human-machine interaction, electronic skin, and intelligent wearable devices. The proposed triboiontronics utilize ion migration and arrangement triggered by mechanical stimuli to control electronic properties, which are ready to deliver new interdisciplinary research directions.

With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm-1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.

Flexible sensors that efficiently detect various stimuli relevant to specific environmental or biological species have been extensively studied due to their great potential for the Internet of Things and wearable electronics applications. The application of flexible and stretchable electronics to device-engineering technologies has enabled the fabrication of slender, lightweight, stretchable, and foldable sensors. Here, recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined. In addition, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided. The conclusion presents challenges and perspectives in this field.