1. Stability of SiC and SiO2 in Helium with Little Water Vapor
- Author
-
Wen Yue, Zhi Qiang Fu, Chun He Tang, and Cheng Biao Wang
- Subjects
Materials science ,Influence factor ,Vapor pressure ,General Engineering ,chemistry.chemical_element ,Partial pressure ,engineering.material ,Decomposition ,Composite coating ,Coating ,chemistry ,Chemical engineering ,engineering ,Water vapor ,Helium - Abstract
The stability of SiC and SiO2 in helium with little water vapor is studied in this paper in order to confirm whether they can service as anti-oxidation layers on the surface of fuel elements of high temperature gas-cooled reactor (HTR) under water-ingress accident. Through thermodynamic analysis, it is found that the influence factor controlling the critical temperature of passive oxidation for SiC in He-H2O is the partial pressure of H2O; the critical temperature of passive oxidation for SiC increases with the partial pressure of H2O. The influence factors controlling the critical temperature of decomposition for SiO2 are the partial pressure of H2O and the amount of H2O in gas for 1 mol SiO2, the critical temperature of decomposition for SiO2 increases with the partial pressure of H2O while it decreases with the amount of H2O in gas for 1 mol SiO2. SiO2/SiC composite coating is more suitable than SiC coating in He-H2O with little H2O.
- Published
- 2014