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Your search keyword '"Peng, Dong‐Liang"' showing total 15 results
Start Over Author "Peng, Dong‐Liang" Journal advanced materials research
15 results on '"Peng, Dong‐Liang"'

14. Soft Magnetic Property of [Fe80Ni20-O/ZnO]n Multilayer Thin Films for High-Frequency Application

Author

Wang, Yuan, Geng, Hao, Nie, Shuang Jun, Wei, Jian Qing, Wang, Lai Sen, Yue, Guang Hui, Chen, Yuan Zhi, and Peng, Dong Liang

Abstract

A series of [Fe80Ni20-O/ZnO]n multilayer thin films with different ZnO separate layer thicknesses (t, from 0 to 3 nm) and fixed Fe80Ni20-O layer thickness (about 5 nm) have been fabricated on (100)-oriented silicon wafers and glass substrates by reactive magnetron sputtering. Microstructure analysis and static magnetic measurement results indicate that the magnetic properties of the films can be adjusted by the variation of ZnO monolayers thickness. All films reveal an evident in-plane uniaxial magnetic anisotropy (IPUMA). The values of in-plane uniaxial magnetic anisotropy fields (Hk) and resistivity (ρ) can be changed from 8 to 57 Oe and 62 to 168 μΩ•cm respectively with the t increasing. While the values of hard axis coercivity (Hch) and easy axis coercivity (Hce) reveal minimums of 1.5 and 3 Oe respectively at t = 1 nm.

Published
2012
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15. Synthesis and Gas-Sensing Character of SnOx Cluster-Assembled Films

Author

Hihara, Takehiko, Matsukawa, H., Peng, Dong Liang, and Sumiyama, K.

Abstract

Nanometric SnOx cluster-assembled films prepared by a plasma-gas-condensation cluster deposition apparatus have been examined by transmission electron microscopy (TEM) and electrical resistance. TEM observation showed that those clusters were almost spherical and size-monodispersive with a mean cluster size of 10 nm. The high-resolution TEM images indicated that the films were composed of randomly oriented nanocrystallites and that their surface roughness retained the traces of the original SnOx clusters. The electrical resistance of the SnOx cluster-assembled film decreased with decreasing partial O2 gas pressure. This result suggests that the intergranular potential barriers were responsible for the resisitvity variation. The activation energy estimated from the temperature-dependent resistivity was 0.75 eV for 330 K < T < 410 K under the partial O2 gas pressure of 0.02 MPa.

Published
2006
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