1. Gan-Based Leds Grown on Cone-Shaped Patterned Sapphire Substrates with Peripheral Air Voids by Lateral Etching
- Author
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Nan Ming Lin, Lo Hsin Ming, Yang Ya Yu, Wun Cin Lin, Shih-Chang Shei, Shoou-Jinn Chang, and Wei-Chih Lai
- Subjects
Materials science ,business.industry ,General Engineering ,Substrate (electronics) ,law.invention ,Etching (microfabrication) ,law ,Sapphire ,Air voids ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business ,Laser scribing ,Light-emitting diode - Abstract
In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.
- Published
- 2011