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The Raman spectra of polystalline Er2O3 films on Si (001) substrates annealed at different temperatures in O2 atmosphere were investigated. Seven Raman lines are identified in annealed Er2O3 films on Si (001) substrates. Two broad peaks larger than 600 cm-1 are detected, and their origination is discussed. Raman spectroscopy is proved to be a simple and sensitive method to characterize the structures of Er2O3 films on Si substrates.

The influence of annealing under different conditions on CdS films after CdCl2 post-growth treatments was investigated. The crystalline quality of CdS films was improved after the treatment with CdCl2 at 400℃ in N2.