Search

For metal halide perovskite (MHP)‐based light‐emitting diodes (PeLEDs), effective radiative recombination of the injected holes and electrons within the MHP layer and minimized injection energy barriers at the interfaces between MHP emission layer and charge injection layers are prerequisites for high‐performance and stable PeLEDs. Herein, for the first time, novel p‐type carbon quantum dots (CQDs) are introduced as a hole injection layer in PeLEDs to replace acidic poly(3,4‐ethylenedioxythiophene):poly styrene sulfonate (PEDOT:PSS) layer. The CQDs demonstrate high hole transport mobility and desirable hole injection energy level. Moreover, the carboxyl, amine, and hydroxyl groups on CQDs not only offer a hydrophilic surface for high‐quality perovskite layer growth, but also passivate the perovskite surface defects to suppress the interfacial exciton quenching. Based on the multifunctional p‐type CQDs, high‐performance green CsPbBr3 PeLEDs with a low turn‐on voltage of only 2.8 V, maximum luminance of 25 770 cd m−2, and maximum external quantum efficiency (EQE) of 13.8% are achieved. The PeLEDs also show good operational stability and long‐term environmental stability. The first application of CQDs as a hole injection layer in PeLEDs breaks through the traditional cognition of carbon materials and opens up new pathways for the developments of carbon nanomaterials in optoelectronic devices. [ABSTRACT FROM AUTHOR]