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The LD conversion offers great potential in providing an additional degree of freedom that may be beneficial to novel polarization‐wavelength‐selective detectors and optical switching. However, conventional crystals with optical anisotropy typically show unidirectional LD over a broad wavelength range and the materials with LD conversion behavior remain scarce. Here, by combining angle‐resolved polarized optical absorption measurements and theoretical calculations, this study demonstrates that quasi‐1D Weyl semimetal (TaSe4)2I single crystal shows unique LD conversion phenomenon at the wavelength of 1064 nm. Meanwhile, (TaSe4)2I persists giant linear optical anisotropy due to the intrinsic feature of 1D [TaSe4] chains along the c‐axis. Additionally, the (TaSe4)2I nanoribbon exhibits anisotropic second harmonic generation (SHG). These results hold significant importance to facilitate the development of topological photonics and novel photonic devices applications based on topological semimetals. [ABSTRACT FROM AUTHOR]

Despite the impressive progresses in terahertz (THz) sources and detection, there is still a big challenge for high performance active optoelectronic THz devices such as THz modulators. All‐optically controlled THz modulators with large modulation depth (MD) and wide modulation bandwidth are of great importance for the THz technology. Herein, a MoTe2/Si van der Waals (vdWs) heterostructure is rationally designed as all‐optical THz modulator by taking advantage of their similar band alignment and easy integration with Si complementary metal‐oxide‐semiconductor (CMOS). The MoTe2/Si modulator presents an ultrasensitive THz modulation performance with a MD of 99.9% under a low illumination power of 300 mW at 1064 nm. This is a record MD for TMDCs‐based all‐optically controlled THz modulators to date. Moreover, the MoTe2/Si modulator exhibits broadband modulation performance with a wide frequency range from 0.3 to 2.0 THz. The high modulation performance under low illumination power is beneficial for practical application with low energy consumption and easy heat dissipation, which is advantageous to modulator chip. This work validates a facile protocol for fabricating high performance THz modulators and paves the way for their practical applications in THz technology. [ABSTRACT FROM AUTHOR]