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Semi‐floating gate field‐effect transistors (SFG‐FETs) based on 2D materials have received much attention due to their unique optoelectronic characteristics, potential applications in near‐memory computing and constructing sensing‐memory‐processing units. Here, the non‐volatile and gate‐controlled multistate photovoltaic response of a WSe2/h‐BN/graphene SFG‐FET is investigated both in experimental and theoretical aspects. Due to the ambipolar carrier transport of WSe2 channel, both electrons and holes can be stored in the graphene floating gate layer, which results in two evident memory windows on the round sweep transfer characteristic curve. Different charge‐stored states of the SFG layer enable the channel to form a lateral junction that can be adjusted by the gate voltage, which leads to the gate‐controlled multistate photovoltaic response. A theoretical model is implemented to explain the memory and the multistate photovoltaic response behaviors in a quasi‐quantitative level. The relationship between the charge‐stored states in the SFG and the photo‐response, as well as its dependence on the gate voltage are systematically analyzed. These research results provide a reliable way for realizing high‐performance multi‐functional photodetectors based on SFG‐FETs and for thorough understanding the complicated optoelectronic behaviors of SFG‐FETs. [ABSTRACT FROM AUTHOR]

Perfect vortex beams (PVBs) possessing orbital angular momentum (OAM) and constant intensity profile enable practical applications in information encoding and transmission due to an unbounded number of orthogonal OAM channels and fixed annular intensity distributions. Geometric metasurfaces, which are 2D counterparts of metamaterials, have provided an ultra‐compact platform to flexibly design perfect vortex beams in a single flat device. However, the previous reported PVBs based on geometric metasurfaces are limited to ring‐shaped intensity profiles and intrinsic spin‐coupling between two orthogonal spin‐components. Here, spin‐decoupled geometric metasurfaces encoding with two‐step coordinate transformations are proposed to generate helicity‐independent PVBs with transmutable intensity profiles. By tailoring local phase gradient along the azimuthal direction, spin‐independent and polarization‐rotated terahertz (THz) PVBs with CN‐fold rotationally symmetric intensity profiles have been theoretically designed and experimentally demonstrated. Furthermore, THz PVBs with arbitrary intensity profiles have also been realized. The unique approach for simultaneously manipulating the spiral phase, focusing phase, as well as intensity profiles will open a new avenue to develop multifunctional integrated devices and systems, which enables potential applications in information processing and optical communication. [ABSTRACT FROM AUTHOR]

Synaptic device is an important component in artificial neural networks. Electrically‐controlled long‐term depression (LTD) is demonstrated in three‐terminal photonic synaptic devices, which is useful for improving the efficiency of artificial neural networks. The mechanism of the three‐terminal photonic synaptic device is similar to that of the photo‐induced doping effect. Photo‐assisted carrier transport and recombination are expected to accelerate the LTD process. However, the effects of photon illumination on LTD are not investigated. Here, the effects of electrical stimulation and photo‐stimulation on the long‐term plasticity (LTP) and LTD process of photonic synaptic devices based on MoS2/h‐BN field‐effect transistors (FETs) are systemically investigated. The influences of gate dielectric layer on the photo‐induced doping are explored. The non‐volatile and electrically‐erasable properties of photo‐induced doping in MoS2/h‐BN FETs are due to the van der Waals energy barrier at the MoS2/h‐BN interface. The synaptic functions of LTP and LTD can be mimicked by the photo‐induced doping effect. The LTD process will be accelerated with the applications of positive gate voltage and laser illumination, which improves the speed of information processing. These results presented in this paper are useful for realizing high‐performance synaptic devices based on the photo‐induced doping effect. [ABSTRACT FROM AUTHOR]

Lenses with an extended focal depth have crucial applications in high‐precision optical alignment systems and optical disk readout systems. However, further development of lenses with an extended focal depth under radial and angular modulation is limited because of fabrication difficulties. Metasurfaces, 2D metamaterials, have shown unprecedented capabilities in the manipulation of the intensity, phase, and polarization of electromagnetic waves. Here, based on geometric metasurfaces, an approach for realizing a terahertz metalens is proposed and experimentally demonstrated with simultaneous extended focal depth and polarization insensitivity. Under the illumination of arbitrarily polarized light, this metalens shows a focal depth of ≈23 λ along the propagation direction, resulting in an ultralong longitudinal working distance. As a proof‐of‐concept, longitudinal high‐tolerance imaging based on the metalens is demonstrated. The unique approach for designing polarization‐insensitive metalenses with an extended focal depth may find applications in imaging, lithography, and information processing. [ABSTRACT FROM AUTHOR]

Electromagnetic waves carrying orbital angular momentum (OAM), namely, vortex beams, have a plethora of applications ranging from rotating microparticles to high‐capacity data transmissions, and it is a continuing trend in manipulating OAM with higher degrees of freedom. Here, an approach to control terahertz (THz) near‐field plasmonic vortex based on geometric and dynamic phase is proposed and experimentally demonstrated. By locally tailoring the orientation angle (geometric phase) and radial position (dynamic phase) of aperture arrays embedded in an ultrathin gold film, the excited surface waves can be flexibly engineered to form both spin‐independent and spin‐dependent THz plasmonic vortex field distributions, resulting in multi‐degree of freedom for controlling OAM of THz surface plasmon polaritons (SPPs). Arbitrary OAM values of THz plasmonic vortex and coherent superposition between two OAM states are investigated based on near‐field scanning terahertz microscopy (NSTM) system. The proposed approach provides unprecedented freedom to modulate THz near‐field plasmonic vortex, which will have potential applications in THz communications and quantum information processing. A novel ultrathin platform is proposed and experimentally demonstrated to realize the manipulation of terahertz (THz) near‐field orbital angular momentum (OAM). By locally tailoring the orientation angle and radial position of aperture arrays in a gold film, the surface plasmon polaritons (SPPs) can be flexibly engineered to form both spin‐independent and spin‐dependent THz plasmonic vortex field, resulting in multi‐degree of freedom for controlling OAM of THz SPPs. [ABSTRACT FROM AUTHOR]