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Nano air channel transistors (NACTs) provide numerous advantages over traditional silicon devices, including faster switching speeds, higher operating frequencies, and enhanced radiation hardness attributable to the ballistic transport of electrons. In the development of field‐emission‐based integrated circuits, low‐power consumption rectifying nano air channel diodes (NACDs) play a crucial role. However, achieving rectification characteristics in NACDs is challenging due to their structural and material symmetry. This paper proposes a vertical GaN NACD with a consistent nano air channel fabricated using IC‐compatible processes. The GaN NACD exhibits an exceptionally low turn‐on voltage of 0.3 V while delivering a high output current of 5.02 mA at 3 V. Notably, it demonstrates a high rectification ratio of up to 2.2 × 105, attributing to significant work function disparities within the GaN‐Au structure, coupled with the reduction of Au surface roughness to minimize reverse current. Furthermore, the junction‐free structure and superior material properties of GaN enable the NACD to be suitable for use in radiation‐rich environments. With its potential as a fundamental component of ultrafast and ultrahigh‐frequency integrated circuits, this intriguing and cost‐effective rectifying diode is anticipated to garner widespread interest within the electronics community. [ABSTRACT FROM AUTHOR]

Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high‐frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub‐100 nm air channels. Despite these advantages, NACTs are still limited by low currents and instability compared to solid‐state devices. GaN, with its low electron affinity, strong thermal and chemical stability, and high breakdown electric field, presents an appealing candidate as a field emission material. Here, a vertical GaN nanoscale air channel diode (NACD) with a 50 nm air channel is reported, fabricated by low‐cost IC‐compatible manufacturing technologies on a 2‐inch sapphire wafer. The device boasts a record field emission current of 11 mA at 10 V in the air and exhibits outstanding stability during cyclic, long‐term, and pulsed voltage testing. Additionally, it displays fast switching characteristics and good repeatability with a response time of fewer than 10 ns. Moreover, the temperature‐dependent performance of the device can guide the design of GaN NACTs for applications in extreme conditions. The research holds great promise for large current NACTs and will speed up their practical implementation. [ABSTRACT FROM AUTHOR]