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Funder: Engineering and Physical Sciences Research Council; Id: http://dx.doi.org/10.13039/501100000266, Funder: (EPSRC), Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V−1 s−1 with high on–off current ratio of 108. The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low‐temperature solution‐processed metal oxide semiconductors.

Radiative recombination in thin films of the archetypical, high‐performing perovskites CH3NH3PbBr3 and CH3NH3PbI3 shows localized regions of increased emission with dimensions ≈500 nm. Maps of the spectral emission line shape show narrower emission lines in high emission regions, which can be attributed to increased order. Excited states do not diffuse out of high emission regions before they decay, but are decoupled from nearby regions, either by slow diffusion rates or energetic barriers.