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As the scaling of silicon MOSFET approaches to its physical limit, research efforts have been made in exploring alternative devices. In this work, fundamental design metrics of analog circuits using two-dimensional transition metal dichalcogenide (2D-TMD) molybdenum disulfide (MoS 2 ) transistors are systematically investigated and compared with the state-of-the-art silicon MOSFETs. Based on analytical derivation and numerical simulations, we find that the drain current efficiency and channel length modulation factor of MoS 2 transistors are less relevant to the channel length. Under a condition of the same bias current and device geometry, intrinsic gains of MoS 2 transistors are at least 12.3 dB higher than silicon MOSFETs. Three case studies are performed to investigate the use of MoS 2 transistors in analog circuits. The key performance indicators of operational amplifiers, such as circuit area, power consumption, voltage gain, gain-bandwidth product (GBW), and tolerance to random process variation are studied. Simulation results demonstrate that MoS 2 based analog circuits lead to significant improvement in performance and are more resilient to process variation. For example, when designing two-stage common source amplifiers, under an iso-GBW condition, MoS 2 -based design can increase voltage gain by at least 72%, save circuit area by 45–60%, and reduce power consumption by 11–58% than silicon-based designs. [ABSTRACT FROM AUTHOR]

As the scaling of silicon MOSFET approaches to its physical limit, research efforts have been made in exploring alternative devices. In this work, fundamental design metrics of analog circuits using two-dimensional transition metal dichalcogenide (2D-TMD) molybdenum disulfide (MoS 2 ) transistors are systematically investigated and compared with the state-of-the-art silicon MOSFETs. Based on analytical derivation and numerical simulations, we find that the drain current efficiency and channel length modulation factor of MoS 2 transistors are less relevant to the channel length. Under a condition of the same bias current and device geometry, intrinsic gains of MoS 2 transistors are at least 12.3 dB higher than silicon MOSFETs. Three case studies are performed to investigate the use of MoS 2 transistors in analog circuits. The key performance indicators of operational amplifiers, such as circuit area, power consumption, voltage gain, gain-bandwidth product (GBW), and tolerance to random process variation are studied. Simulation results demonstrate that MoS 2 based analog circuits lead to significant improvement in performance and are more resilient to process variation. For example, when designing two-stage common source amplifiers, under an iso-GBW condition, MoS 2 -based design can increase voltage gain by at least 72%, save circuit area by 45–60%, and reduce power consumption by 11–58% than silicon-based designs. [ABSTRACT FROM AUTHOR]