1. A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate.
- Author
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Liu, Yang, Lv, Yuanjie, Zhou, Heng, Lin, Zhaojun, Yang, Yongxiong, Jiang, Guangyuan, Zhou, Yan, and Wang, Mingyan
- Subjects
- *
FIELD-effect transistors , *TWO-dimensional electron gas , *GALLIUM nitride , *THRESHOLD voltage , *INTEGRATED circuits - Abstract
In this study, a split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate was fabricated. Through experiment and analysis, it was discovered that by applying a constant potential (usually 0 V or negative potential) to the auxiliary gate, a negative bias can be formed between the auxiliary gate and the channel. This consumes the two-dimensional electron gas in the channel, leading to significant improvements in the saturation characteristics of split-gate devices. By applying different potentials to the main gate and the auxiliary gate, a variety of device working modes can be obtained, and the threshold voltage can be altered across a large range. These advantages make split-gate devices with auxiliary gates more suitable for increasingly complex integrated circuit applications. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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