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GaN is an excellent material choice for power devices due to its excellent properties such as super wide bandgap width and high electron mobility. However, the problem of temperature affects the thermo reliability and hinders the potential of GaN devices. In this paper, the electrical properties of GaN under temperature have been studied by the combination of numerical simulation and experimental research. The electric current change and electrical resistivity of polarized and depolarized GaN semiconductor samples were tested in an environment-test cabinet. Based on the influence of temperature, the expression of the resistivity curve vs temperature was established for polarized and depolarized GaN samples. It is shown that the resistivity model predictions are consistent with experimental results. The I–V characteristic curves under different temperatures were also measured. Thus, such a model is instructive to the reliable design of GaN high-temperature devices. The findings will be instructive to the optimal design of GaN electronic components. [ABSTRACT FROM AUTHOR]

In this study, we report a large magneto-thermal conductivity effect, potentially usable in heat flow switches and thermoelectric devices, in Ag2Te over a wide temperature range, including room temperature. When a magnetic field of μ0H = 9 T is applied to Ag2Te at 300 K along the direction perpendicular to the heat and electric currents, the thermal conductivity κ decreases by a remarkable 61%. This effect is mainly caused by the suppressed electronic thermal conductivity in association with a significant magnetoresistance effect, but the suppression of the thermal conductivity is larger than that of the electrical conductivity, presumably due to a field-induced decrease in the Lorenz ratio. Its very low lattice thermal conductivity, as low as 0.5 W m−1 K−1, also greatly contributes to the large relative magneto-thermal conductivity effect. The significant decrease in thermal conductivity and the 18% increase in the Seebeck coefficient S lead to a nearly 100% increase in the thermoelectric figure of merit zT = S2σTκ−1 despite the 43% decrease in electrical conductivity σ. [ABSTRACT FROM AUTHOR]

Magnesium oxide (MgO) is generally a wide band-gap oxide unable to conduct electric current in the bulk at room temperature. In this study, MgO nanocubes synthesized by self-burning micro-sized Mg metal powders in air showed electrical conductivity when they were sandwiched between two gold-mesh electrodes and steadily applied a voltage at room temperature (∼25 °C). In addition, a simultaneous light emission caused by the microdischarge of nitrogen molecules occurred adjacent to the cathode. The light emission was observed when traces of water vapor existed in the gas environment. In the case of a voltage pulse produced by switching off, transient emissions of Mg I and Mg II were detected on both sides of the electrodes. However, those steady and transient light emissions were not observed in the commercial MgO nanoparticles devoid of nanocubes. The light emissions shown in the cases of the steady-state might be caused by electron injection into the empty conductive states, which exist along the edges of MgO nanocubes, as a result of the spontaneous dissociation of water vapors at reactive sites of the nanocube surfaces as well as a result of the reduction of the energy barriers between the cathode and MgO nanocubes in contact. For transient emission, electrons trapped in the low coordinate sites were released with voltage pulse and neutralized the nearby Mg+ and Mg2+ ions, driving them into the excited neutral states, Mg I and Mg II. [ABSTRACT FROM AUTHOR]