1. Structures and properties of nano-XNH2 (X = C, Si, Ge, and Sn).
- Author
-
Ma, Shengqian, Tan, Jingfang, and Wu, Xiaomei
- Subjects
- *
TIN , *LATTICE constants , *DENSITY functional theory , *ELECTRONIC equipment , *CURVE fitting , *OPTOELECTRONIC devices - Abstract
The structures and properties of nano-XNH2 (X = C, Si, Ge, and Sn) are explored using Density Functional Theory (DFT). Elastic strain and width are introduced to investigate the nano-XNH2 nanosheets and nanoribbons. First, their structural parameters and lattice constants are investigated by using quadratic curve fitting methods. Second, the regulation of bandgap with the change in the elastic strain and width is investigated. The theoretical calculations show that the bandgaps of these materials can be easily modulated. Therefore, nano-XNH2 has great potential applications in stress sensors and electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF