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Your search keyword '"Alexander De Los Reyes"' showing total 2 results
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2 results on '"Alexander De Los Reyes"'

1. Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Author

Jessica P. C. Afalla, Alexander de los Reyes, Valynn Katrine Mag-usara, Lorenzo P. Lopez Jr., Kohji Yamamoto, Masahiko Tani, Armando S. Somintac, Arnel A. Salvador, and Elmer S. Estacio

Subjects
Physics, QC1-999
Abstract

Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field.

Published
2017
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2. Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Author

Alexander De Los Reyes, Kohji Yamamoto, Elmer Estacio, Arnel Salvador, Masahiko Tani, Lorenzo Lopez, Valynn Katrine Mag-usara, Armando Somintac, and Jessica Afalla

Subjects
Photoluminescence, Materials science, Terahertz radiation, General Physics and Astronomy, 02 engineering and technology, Substrate (electronics), Electron, engineering.material, 01 natural sciences, Gallium arsenide, chemistry.chemical_compound, 0103 physical sciences, 010302 applied physics, Quenching, Maple, business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, lcsh:QC1-999, chemistry, engineering, Optoelectronics, 0210 nano-technology, business, lcsh:Physics, Intensity (heat transfer)
Abstract

Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field.

Published
2017
Full Text
View/download PDF

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