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Magnetic characteristics of HoPd2Si2 and ErPd2Si2 with the ThCr2Si2-type crystal structure have been studied from measurements of magnetic susceptibility χ(T) and magnetization M(B) on the single crystals. The compound HoPd2Si2 orders antiferromagnetically below TN = 5.1 K with the magnetic easy direction of [110]. The [110] magnetization process is a three-step metamagnetic one; metamagnetic transitions at B1 = 0.9 T, B2 = 1.5 T and B3 = 3.4 T. The [100] process is a two-step one. Between [110] and [100], strong magnetic anisotropy is seen for high magnetic fields. ErPd2Si2 shows an antiferromagnetic behavior with the magnetic easy direction of [001] below TN=3.9 K. The χ(T) shows four anomalies, which may come from magnetic transitions, at Tmax = 5.1 K, TN = T1 = 3.9 K, T2 = 3.1 K and T3 = 2.2 K. The [001] magnetization process at 2 K is a three-step metamagnetic process; metamagnetic transitions at B1 = 0.5 T, B2 = 1.0 T and B3 = 1.3 T. In the basal plane magnetization processes, a very small metamagnetic transition is at 1.9 T. Crystalline electric field (CEF) analysis was performed, and anisotropic magnetic behaviors are explained. The magnetic data of the RPd2Si2 compound series are summarized.Magnetic characteristics of HoPd2Si2 and ErPd2Si2 with the ThCr2Si2-type crystal structure have been studied from measurements of magnetic susceptibility χ(T) and magnetization M(B) on the single crystals. The compound HoPd2Si2 orders antiferromagnetically below TN = 5.1 K with the magnetic easy direction of [110]. The [110] magnetization process is a three-step metamagnetic one; metamagnetic transitions at B1 = 0.9 T, B2 = 1.5 T and B3 = 3.4 T. The [100] process is a two-step one. Between [110] and [100], strong magnetic anisotropy is seen for high magnetic fields. ErPd2Si2 shows an antiferromagnetic behavior with the magnetic easy direction of [001] below TN=3.9 K. The χ(T) shows four anomalies, which may come from magnetic transitions, at Tmax = 5.1 K, TN = T1 = 3.9 K, T2 = 3.1 K and T3 = 2.2 K. The [001] magnetization process at 2 K is a three-step metamagnetic process; metamagnetic transitions at B1 = 0.5 T, B2 = 1.0 T and B3 = 1.3 T. In the basal plane magnetization processes, a very small metamagne...