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We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 µm thick buffer comprising a Ge layer, a GaAs layer and an In- AlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 107 cm-2 with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 µm long channel length transistors are fabricated from the wafer with IDS of 70 µA/µm and gm of above 60 µS/µm, demonstrating the high quality of the grown materials. [ABSTRACT FROM AUTHOR]