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The presence of lead material in lead halide perovskite absorber is always remains a major obstacle due to its toxic nature. The emergence of tin halide perovskite absorber will overcome this toxicity issue and due to its extraordinary properties such as direct band gap and compatible visible spectrum of solar cells attracts a wide attention to researchers to focus on the development of lead free perovskite solar cells. This paper comprises of the device simulation of lead-free perovskite material. In addition, effect of various hole transport layers, and the effect of absorber band gap have been studied. It has been observed from the results that along with the proper band alignment of HTM layer with perovskite layer, the mobility of HTM layer plays an important role to achieve better device performance. Furthermore, it has been concluded that Cu2O layer as a hole transport material exhibits better device performance as compare to the other HTM layer used in this paper. [ABSTRACT FROM AUTHOR]