1. Properties of Ga1−xMnxN Epilayers Grown by Molecular Beam Epitaxy
- Author
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X. Biquard, E. Bellet, Joel Cibert, D. Halley, R. Giraud, David Ferrand, S. Marcet, E. T. Kulatov, H. Mariette, Catherine Bougerol, Andrey Titov, and Shinji Kuroda
- Subjects
Magnetization ,Paramagnetism ,Materials science ,Magnetic circular dichroism ,Band gap ,Analytical chemistry ,Magnetic semiconductor ,Acceptor ,Wurtzite crystal structure ,Molecular beam epitaxy - Abstract
Wurtzite (Ga,Mn)N epilayers were grown by plasma‐assisted molecular beam epitaxy. Mn incorporation strongly depends on growth conditions. Infrared optical absorption shows absorption bands related to neutral Mn acceptor A0 at 1.412 eV and 1.43 eV. Magnetic circular dichroism spectroscopyat the band gap edge, in agreement with magnetization data, exhibits temperature and magnetic field dependence revealing paramagnetic properties of Mn‐doped GaN.
- Published
- 2005
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