Search

We have measured the β decay half-lives of 50Mn, 51Fe, 52,53Co, and 53,54Ni produced via the 58Ni projectile fragmentation. The uncertainty of 52Co half-life was reduced by a factor of 3 compared to the previous result. The half-lives were evaluated with the previous values and used as inputs of nucleosynthesis calculations of the rapid proton-capture process in an x-ray burst. [ABSTRACT FROM AUTHOR]

Systematic indirect measurements of nuclear astrophysical reactions using the unstable ion beam facility GIRAFFE in CIAE were performed. We have measured the angular distributions of transfer reactions, such as 8Li(d,p)9Li, 8Li(d,n)9Be and 8Li(p,d)7Li in inverse kinematics, and derived the astrophysical S-factors or reaction rates for 8Li(n,γ)9Li and 8Li(p,γ)9Be by using asymptotic normalization coefficient (ANC) or spectroscopic factor methods. [ABSTRACT FROM AUTHOR]

Metal electrode materials are being extensively evaluated as potential replacements for polysilicon in order to eliminate gate depletion, reduce gate resistance, overcome equivalent oxide thickness (EOT) scaling limitations and Fermi level pinning effects associated with the reaction between Hf-based dielectric films and the polysilicon electrode. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) using X-ray spectra and electron energy loss spectra (EELS) were used to produce elemental profiles of dielectric and metal electrode constituents with particular emphasis on interfacial interactions. High spatial resolution chemical scan profiles of silicon, oxygen, nitrogen, and hafnium from the dielectric components in conjunction with various transition metals including hafnium, tantalum, molybdenum and ruthenium have been acquired to characterize the extent of material intermixing and crystallization as a function of deposition parameters and anneal temperature. The influence of the atomic percent Si in ternary compounds consisting of transition metal nitrides is presented within the context of Rutherford backscattering (RBS) composition data. Finally, factors influencing metal workfunction are presented based on physical and electrical characterization of high-k capacitors and transistors. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]