1. Carrier transfer in the GaAs-based tunnel injection quantum well-quantum dots structures.
- Author
-
Syperek, M., Leszczynski, P., Rudno-Rudzinski, W., hooked_ee, G., Andrzejewski, J., Misiewicz, J., Pavelescu, E. M., Gilfert, C., and Reithmaier, J. P.
- Subjects
GALLIUM arsenide semiconductors ,QUANTUM wells ,SEMICONDUCTOR junctions ,QUANTUM tunneling ,PHOTOLUMINESCENCE ,QUANTUM dots ,ELECTRONIC structure ,TEMPERATURE effect - Abstract
The time-resolved photoluminescence experiment has been used to examine temperature dependent dynamics in the quantum well-quantum dots tunnel injection structures. The obtained pictures of the photoluminescence kinetics for the reference quantum dots and tunnel injection structures indicate a very different relaxation scenario influenced strongly by the temperature dependent phenomena. We point out the role of the phonon bath which affects the back tunneling and carriers escape processes from the quantum dots in the tunnel injection structures. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF