129 results on '"Seebauer, Edmund G."'
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2. Surface Analytics in Support of the Development of Static AutoClean™—an In-Situ Cleaning Process for Ion Implanters
3. Correlation of Beam Transport Characteristics and Mass Resolving Power to Analyzing Magnet Pole Piece Wear in Axcelis HE Ion Implanters
4. The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants
5. In-Situ Ion Source Cleaning: Review of Chemical Mechanisms and Evaluation Data at Production Fabs
6. Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S∕D Implants in an Existing Batch Implanter Production Line
7. Ion Beam Extraction from Large Bore 11 to 13 GHz ECR Ion Source with a Pair of Cylindrically Comb-Shaped Magnetic Fields
8. Comparison of B, BF[sub 2] & B[sub 18]H[sub 22] for Extension and BF[sub 2], B[sub 18]H[sub 22] & In HALO Implantation for 32 nm Node Using Various Diffusion-less Annealing Techniques
9. Sources for Low Energy Extreme of Ion Implantation
10. Platinum vs. Palladium in Catalyst-Based Hydrogen Sensors Used for Wide Temperature Range Hydrazine Leak Detection
11. Electron Holography Characterization of Shallow Junction Fabricated By Diffusion-less Process for Sub-30 nm Gate-Length MOSFETs
12. The Role of Implanter Parameters on Implant Damage Generation: an Atomistic Simulation Study
13. vMask® Usage in Semiconductor Foundry Manufacturing
14. How Vacancies Assist in the Formation of Antisite-Complex Centers in 3C-SiC during Ion Implantation
15. Boron Diffusion in Amorphous Germanium
16. Dynamics of Carrier Plasma and Thermal Waves in Ion Implanted Si with Varying Pump and Probe Wavelengths
17. Metal Ion Sources for Ion Beam Implantation
18. Ion Implantation into Nanoparticulate Functional Layers
19. Manufacturing Assessment of an XeF[sub 2] In-Situ Clean Process for Mitigation of Species Cross Contamination
20. Threshold Voltage Mismatch Resulting from Mechanical Vibration
21. Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology
22. USJ Process Challenges for sub-45 nm CMOS
23. Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams
24. Approaches to USJ Formation Beyond Molecular Implantation
25. Dose Rate Effects: the Impact of Beam Dynamics on Materials Issues and Device Performance
26. Production of Liquid Cluster Ions by Nozzle Beam Source with and without He Gas
27. An Atomistic Model of Stressed Si Solid-Phase Epitaxy
28. Ion Implanted Left-Handed Tunable Metamaterial for Microwave Circuit Applications
29. Operation and Applications of the Boron Cathodic Arc Ion Source
30. Decreasing Beam Auto Tuning Interruption Events with In-Situ Chemical Cleaning on Axcelis GSD
31. Angle Control on the Optima HE∕XE Ion Implanter
32. Implanter Source Life and Stability Improvement Using In-Situ Chemical Cleaning
33. Investigation of pMOS Device Matching and Characteristics Using B[sub 18]H[sub 22] Implantation
34. Tungsten Transport in an Ion Source
35. Development of Compact Electron Cyclotron Resonance Ion Source with Permanent Magnets for High-Energy Carbon-Ion Therapy
36. Quantitative Evaluation of Ion-implanted Arsenic in Silicon by Instrumental Neutron Activation Analysis
37. A Study of Implanted BF[sub 2] as a Function of Wafer Temperature During Implant
38. Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion Implanters
39. Next Generation Angle Control for Medium Current and High Energy Implanters
40. Fracture in Hydrogen-Implanted Germanium
41. Beam Current Improvements on the Axcelis Optima HD Imax Implanter
42. Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)
43. High Productivity Implantation “PARTIAL IMPLANT”
44. Implant Angle Monitor System of MC3-II
45. Ion Beam Layer Separation of Cadmium Zinc Telluride
46. Improved R[sub s] Monitoring for Robust Process Control of High Energy Well Implants
47. Using Ion Implantation to Streamline High Volt Processing in Standard CMOS
48. Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing
49. Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting
50. Neutralization of Space Charge Effects for Low Energy Ion Beams Using Field Emitters
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