1. Simulation study of leakage current in junction less field effect transistor.
- Author
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Chaudhary, Anshu, Singh, Ashish Kumar, Yadav, Manoj Kumar, and Singh, Gajendra
- Subjects
- *
FIELD-effect transistors , *STRAY currents , *CLEAN energy , *JUNCTION transistors , *SEMICONDUCTOR technology - Abstract
Now, with the progress of semiconductor technology, MOS devices leakage current has developed into a bottleneck. Leakage current components start to resemble ON state current as the devices in reduced to the sub nanometer region. This paper main goal is to find a perform daily comparative examination of number of leakage currents that really are present due to short channel effects. The summary of lot of factors impacting the leakage currents (LC) has been fully examined. Further, there were also various leakage minimization techniques studied. An analysis of the various forms of leakage through data. It has been achieved and evaluated for using channel length technology including junction less transistors. Therefore, after the whole analysis about leakage current junction less field effect transistors (JLFETs) we can say JLFETs is a sustainable and energy efficient transistor. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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