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We present a compact and error tolerant implementation of reconfigurable threshold logic gates (TLG) based on nanoscale DG-MOSFET transistors. The use of independently driven double-gate (IDDG) MOSFETs to build a TLG leads not only to fine-grain reconfigurability by way of voltage-adjustable threshold level (T), but also allows one to vary input weights (w i ) or reduce number of inputs (x i ), depending on the design preferences. Operation of the proposed TLG circuits is verified using UFDG SPICE model, and design trade-offs in terms of size, functionality and performance are also indicated. We show that IDDG MOSFETs lead to more efficient and compact TLG circuits that have better design latitude and noise immunity than the conventional counterparts, while also improving the overall reconfigurability. When the back-gate dynamic threshold adjustment afforded by the ultra-thin (

A novel tunable current-mode integrator for low-voltage low-power applications is presented using mixed-mode TCAD simulations. The design is based on independently driven double-gate (IDDG) MOSFETs, a nano-scale four-terminal device, where one gate can be used to change the characteristics of the other. Using current-mirrors built with IDDG-MOSFETs, we show that the number of active devices in the tunable current-mode integrator, 16 in bulk CMOS design, may be halved, i.e. considerable savings in both total area and power dissipation. The integrator operates with single supply voltage of 1 V and a wide range of tunable bandwidth (~2 decades) and gain (~30 dB). This linear circuit has third-order harmonic distortion as low as ?70 dB in appropriate bias conditions, which can be set via the back-gates. The impact of tuning on the IDDG integrator and conventional design using symmetrically driven (SDDG) MOSFETs is comparatively studied. The proposed design is a good example for performance leverage through IDDG MOSFET architectures in analog circuits integral to future mixed-signal systems.

Use of independently-driven nano-scale double gate (DG) MOSFETs for low-power analog circuits is emphasized and illustrated. In independent drive configuration, the top gate response of DG-MOSFETs can be altered by application of a control voltage on the bottom gate. We show that this could be a powerful method to conveniently tune the response of conventional CMOS analog circuits especially for current-mode design. Several examples of such circuits, including current mirrors, a differential current amplifier and differential integrators are illustrated and their performance gauged using TCAD simulations. The topologies and biasing schemes explored here show how the nano-scale DG-MOSFETs may pave way for efficient, mismatch-tolerant and smaller circuits with tunable characteristics.