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In this report, we have developed a high sensitivity zinc ion (Zn2+) detection method based on a Schiff base functionalized extended gate (EG)-AlGaN/GaN high electron mobility (HEMT) sensor. The complexation reaction between the Schiff base and the zinc ions would cause surface potential change on the extended gate, and achieve the purpose of zinc ion detection. Compared with conventional methods, the Schiff base functionalized EG-AlGaN/GaN high electron mobility sensor showed a rapid response (less than 10 seconds) and the limit of detection (LOD) was 1 fM. At the same time, the real-time detection of zinc ion concentration ranging from 1 fM to 1 μM showed good linearity (R2 = 0.9962). These results indicated that it provides a promising real-time detection method for trace-free zinc ion trace detection. [ABSTRACT FROM AUTHOR]

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection. [ABSTRACT FROM AUTHOR]