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The development of high‐performance X‐ray detectors requires scintillators with fast decay time, high light yield, stability, and X‐ray absorption capacity, which are difficult to achieve in a single material. Here, we present the first example of a lanthanide chalcogenide of LaCsSiS4 : 1 % Ce3+ that simultaneously integrates multiple desirable properties for an ideal scintillator. LaCsSiS4 : 1 % Ce3+ demonstrates a remarkably low detection limit of 43.13 nGyair s−1 and a high photoluminescence quantum yield of 98.24 %, resulting in a high light yield of 50480±1441 photons/MeV. Notably, LaCsSiS4 : 1 % Ce3+ exhibits a fast decay time of only 29.35±0.16 ns, making it one of the fastest scintillators among all lanthanide‐based inorganic scintillators. Furthermore, this material shows robust radiation and moisture resistance, endowing it with suitability for chemical processing under solution conditions. To demonstrate the X‐ray imaging capacity of LaCsSiS4 : 1 % Ce3+, we fabricated a flexible X‐ray detector that achieved a high spatial resolution of 8.2 lp mm−1. This work highlights the potential of lanthanide chalcogenide as a promising candidate for high‐performance scintillators. [ABSTRACT FROM AUTHOR]

A wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10−4 cm2 V−1); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection. [ABSTRACT FROM AUTHOR]

Semiconductive metal–organic frameworks (MOFs) have emerged in applications such as chemical sensors, electrocatalysts, energy storage materials, and electronic devices. However, examples of semiconductive MOFs within flexible electronics have not been reported. We present flexible X‐ray detectors prepared by thermoplastic dispersal of a semiconductive MOF (SCU‐13) through a commercially available polymer, poly(vinylidene fluoride). The flexible detectors exhibit efficient X‐ray‐to‐electric current conversion with enhanced charge‐carrier mobility and low trap density compared to pelleted devices. A high X‐ray detection sensitivity of 65.86 μCGyair−1 cm−2 was achieved, which outperforms other pelleted devices and commercial flexible X‐ray detectors. We demonstrate that the MOF‐based flexible detectors can be operated at multiple bending angles without a deterioration in detection performance. As a proof‐of‐concept, an X‐ray phase contrast under bending conditions was constructed using a 5×5 pixelated MOF‐based imager. [ABSTRACT FROM AUTHOR]

Flexible X-Ray Detector, Lanthanide Chalcogenide Scintillator, Luminescence, X-Ray Imaging Keywords: Flexible X-Ray Detector; Lanthanide Chalcogenide Scintillator; Luminescence; X-Ray Imaging EN Flexible X-Ray Detector Lanthanide Chalcogenide Scintillator Luminescence X-Ray Imaging 1 1 1 08/09/23 20230814 NES 230814 B Scintillators b . In their Communication (e202306465), Xing Dai, Shu-Xian Hu, Yaxing Wang et al. report the chalcogenide-based scintillator LaCsSiS SB 4 sb :1%Ce SP 3+ sp showing multiple properties, such as high light yield, fast decay time, low detection limit, and good radiation/moisture resistance. [Extracted from the article]