Search

We disclose the intrinsic semiconducting properties of one of the largest mixed‐valent uranium clusters, [H3O+][UV(UVIO2)8(μ3‐O)6(PhCOO)2(Py(CH2O)2)4(DMF)4] (Ph=phenyl, Py=pyridyl, DMF=N,N‐dimethylformamide) (1). Single‐crystal X‐ray crystallography demonstrates that UV center is stabilized within a tetraoxo core surrounded by eight uranyl(VI) pentagonal bipyramidal centers. The oxidation states of uranium are substantiated by spectroscopic data and magnetic susceptibility measurement. Electronic spectroscopy and theory corroborate that UV species serve as electron donors and thus facilitate 1 being a n‐type semiconductor. With the largest effective atomic number among all reported radiation‐detection semiconductor materials, charge transport properties and photoconductivity were investigated under X‐ray excitation for 1: a large on‐off ratio of 500 and considerable charge mobility lifetime product of 2.3×10−4 cm2 V−1, as well as a high detection sensitivity of 23.4 μC Gyair−1 cm−2. [ABSTRACT FROM AUTHOR]

A wide range of tunability in the physical parameters of a semiconductor used for X‐ray detection is desirable to achieve targeted performance optimization. However, in a dense‐phase semiconductor, fine‐tuning one parameter often leads to unwanted changes in other parameters. Herein, the intrinsic openness in an open‐framework semiconductor has been confirmed, for the first time, to be a key structural factor that weakens the mutual exclusivity of the adjustable physical parameters owing to a non‐linear control mechanism. The controllable doping of S in a zeolitic In–Se host results in an optimal balance between resistivity, band gap, and carrier mobility, which finally results in an excellent X‐ray detector with a high figure of merit for the mobility–lifetime product (7.12×10−4 cm2 V−1); this value is superior to that of a commercial α‐Se detector. The current strategy of choosing open‐framework semiconductor materials opens a new window for targeting high‐performance X‐ray detection. [ABSTRACT FROM AUTHOR]

Semiconductive metal–organic frameworks (MOFs) have emerged in applications such as chemical sensors, electrocatalysts, energy storage materials, and electronic devices. However, examples of semiconductive MOFs within flexible electronics have not been reported. We present flexible X‐ray detectors prepared by thermoplastic dispersal of a semiconductive MOF (SCU‐13) through a commercially available polymer, poly(vinylidene fluoride). The flexible detectors exhibit efficient X‐ray‐to‐electric current conversion with enhanced charge‐carrier mobility and low trap density compared to pelleted devices. A high X‐ray detection sensitivity of 65.86 μCGyair−1 cm−2 was achieved, which outperforms other pelleted devices and commercial flexible X‐ray detectors. We demonstrate that the MOF‐based flexible detectors can be operated at multiple bending angles without a deterioration in detection performance. As a proof‐of‐concept, an X‐ray phase contrast under bending conditions was constructed using a 5×5 pixelated MOF‐based imager. [ABSTRACT FROM AUTHOR]