Search

Chirality-induced spin selectivity (CISS) allows for the generation of spin currents without the need for ferromagnets or external magnetic fields, enabling innovative spintronic device designs. One example is a chiral spin valve composed of ferromagnetic and chiral materials, in which the resistance depends on both the magnetization direction of the ferromagnet and the chirality of the chiral material. So far, chiral spin valves have predominately employed chiral organic molecules, which have limited device applications. Chiral perovskites, which combine the properties of inorganic perovskites with chiral organic molecules, provide an excellent platform for exploring CISS-based devices. However, previous chiral perovskite-based spin valves exhibited magnetoresistance (MR) only at low temperatures. Here, we report room temperature MR in a chiral spin valve consisting of chiral perovskites/AlOx/perpendicular ferromagnet structures. It is observed that the chiral MR increases with rising temperature, suggesting the crucial role of phonon-induced enhancement of spin–orbit coupling in CISS in our device. Furthermore, we enhanced the chiral MR by introducing chiral molecules with amplified chirality. This highlights the potential of chirality engineering to improve CISS and the associated chiral MR, thereby opening possibilities for chiral spin valves tailored for cutting-edge spintronic applications.

We investigate the Pt thickness dependence of spin–orbit torques (SOTs) in Co/Pt layers grown on single crystalline SrTiO3 and LaAlO3 and amorphous SiO2 substrates. We measure the SOT-induced effective damping-like fields and spin Hall magnetoresistances of the Co/Pt (tPt) samples, where tPt varies from 0.5 to 5.5 nm. We find that the Co/Pt layers grown on the single crystalline substrates show weaker thickness dependence of the SOT than the samples on the SiO2 substrate, which cannot be explained by the conventional bulk spin Hall effect in the Pt layer. This indicates that there is a non-negligible interfacial SOT originating from the Pt/substrate interface, which is more pronounced for thinner Pt. These results provide a way to design SOT material structures with enhanced SOT efficiency by incorporating interfacial SOT.

Spin–orbit torque facilitates efficient magnetisation switching via an in-plane current in perpendicularly magnetised heavy-metal/ferromagnet heterostructures. The efficiency of spin–orbit-torque-induced switching is determined by the charge-to-spin conversion arising from either bulk or interfacial spin–orbit interactions or both. Here, we demonstrate that the spin–orbit torque and the resultant switching efficiency in Pt/CoFeB systems are significantly enhanced by an interfacial modification involving Ti insertion between the Pt and CoFeB layers. Spin pumping and X-ray magnetic circular dichroism experiments reveal that this enhancement is due to an additional interface-generated spin current of the non-magnetic interface and/or improved spin transparency achieved by suppressing the proximity-induced moment in the Pt layer. Our results demonstrate that interface engineering affords an effective approach to improve spin–orbit torque and thereby magnetisation switching efficiency.