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To make spin–orbit torque magnetic random access memory (SOT-MRAM) practical, current-induced magnetization switching without an external bias field is essential. Given that the CoFeB/MgO structure has already been used in typical spin-transfer torque-MRAM for its high tunneling magnetoresistance, leveraging a similar material system to achieve field-free SOT switching is of great importance. In this work, we systematically investigate the field-free switching mechanism in CoFeB/W/CoFeB T-type structures, where the two CoFeB layers are in-plane and perpendicularly magnetized, respectively. Initial SOT characterization shows a sizable zero-field SOT efficacy (χHx=0) for such T-type devices. Furthermore, field-free angle-dependent SOT measurement confirms the parallel relationship between the built-in bias field and the magnetization of the in-plane magnetized CoFeB. Based on thorough verification and exclusion of other potential mechanisms, the Néel orange-peel effect emerges as the dominant origin for such a built-in bias field, where a positive correlation between the deposited film surface roughness and χHx=0 is found. Based on this discovery, the field-free switching efficacy in T-type structures is further optimized via film roughness tuning and examined with pillar-shaped devices. Our results provide insights into the tentative approach to improve field-free switching using T-type devices and the feasibility of downscaling.