1. A Simulation Based Study on Gate Oxide Breakdown Characteristics for NMOS
- Author
-
Hong Wang, Jia Yuan Guo, Ling Sun, Xiang Dong Luo, and Yu Wei Zhou
- Subjects
Thin gate oxide ,Materials science ,Terminal (electronics) ,Gate oxide ,business.industry ,MOSFET ,Electrical engineering ,Optoelectronics ,Time-dependent gate oxide breakdown ,General Medicine ,business ,Simulation based ,NMOS logic - Abstract
The relationship between the location of gate oxide breakdown in n-MOSFETs and its electrical characteristics has been studied by using TCAD software. The comparison of device terminal current with gate oxide breakdown at different locations suggests that the variation of the source and the drain currents can be directly correlated to the breakdown location in the ultra thin gate oxide. The results provide a fundamental understanding to the experimental results observed in our devices.
- Published
- 2014