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In this work, photo- and temperature-dependent electrical properties of thermally deposited WTe2 thin film have been reported. The n-type behaviour of WTe2 film of thickness ~ 122 nm has been observed. The dark conductivity analysis revealed that thermally activated conduction mechanism is responsible for charge carrier transport. In the presence of light, WTe2 shows higher current than dark conditions response towards light with two activation energies of ~ 0.374 eV and 0.692 eV signifying the dominance of bimolecular recombination under light illumination. On–off cycle determined the respective current variation with different light intensities. The fabricated device possesses responsivity ~ 0.36 mA/W and detectivity of ~ 3.2 × 109 Jones. [ABSTRACT FROM AUTHOR]