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We report on a low dark current density P-B-i-N extended short-wavelength infrared photodetector with atomic layer deposited (ALD) A l 2 O 3 passivation based on a InAs/GaSb/AlSb superlattice. The dark current density of the A l 2 O 3 passivated device was reduced by 38% compared to the unpassivated device. The cutoff wavelength of the photodetector is 1.8 µm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.44 A/W at 1.52 µm, corresponding to a quantum efficiency of 35.8%. The photodetector exhibited a specific detectivity ( D ∗ ) of 1.08×10 11 c m ⋅ H z 1/2 / W with a low dark current density of 3.4×10 -5 A / c m 2 under -50 m v bias at 300 K. The low dark current density A l 2 O 3 passivated device is expected to be used in the fabrication of extended short-wavelength infrared focal plane arrays for imaging.