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Surface plasmon lithography (SPL) has emerged as an innovative approach to nano-fabrication, offering an alternative to traditional patterning methods. To enhance its pattern fidelity in manufacturing, it is essential to incorporate mask correction to reduce critical dimension (CD) errors between the intended target features and the photoresist image. Traditionally, the aerial image of SPL has been modeled and simulated using methods such as finite difference time domain (FDTD) or rigorous coupled wave analysis (RCWA). These models have allowed us to obtain aerial images of the mask patterns. However, relying solely on the aerial image proves insufficient for meeting the rigorous manufacturing standards for mask correction. In our research, we propose a comprehensive model that combines the optical model, employing the FDTD method, and the resist model, tailored to the specific surface plasmon lithography process. Test patterns were meticulously designed with a target CD of 130 nm, and the model was applied to simulate these test patterns, producing the after-development image (ADI) under predefined process conditions. Following a thorough analysis and data processing of the test patterns and ADI data, we established rule tables for the correction of both 1D line patterns and line end patterns. The simulation results unequivocally demonstrate the improved CD error performance achieved by the post-corrected patterns.

Different from traditional lithography, metal material with high absorptivity and high reflectivity is introduced into plasmonic lithography technology. In particular, a silver/photo resist/silver film stack can form a Fabry-Perot (F-P) resonator structure, which can greatly change the behavior of the light reflection and transmission. Since the silver layer has a strong absorption ability to the alignment probe light with a wavelength of 532 or 633 nm, the quality of the alignment signal is seriously affected. In this paper, a thin film Fourier transfer model is established to quantitatively calculate the amplitude and phase information of the diffraction light with different orders. The results show that the diffraction optical power can be enhanced by the thickness optimization of all film stacks, and the maximum wafer quality (normalized diffraction efficiency) can be increased to 25.7%. The mechanism analysis of alignment signal enhancement is based on the F-P resonator phase oscillation amplification effect. However, it can also bring the reverse of both the power and phase for the alignment probe signal when the thickness fluctuation of the F-P resonator exists, which will be a great challenge for through-the-mask moiré fringe alignment technology. To obtain the optical power distribution of the structure surface and image of moiré fringes, a transfer matrix method is given to point-by-point calculate the incidence and reflection of the probe light in the vertical direction. The finite-difference time-domain method is also used to demonstrate alignment performance. It is proved that the subtle fluctuation of the photoresist thickness can make a huge difference to moiré fringes. A balance between the diffraction efficiency and process robustness can be achieved for plasmonic lithographic alignment technology by controlling the thickness range of the F-P resonator structure. In addition, the metal-insulator-metal structure has excellent thickness sensitivity and is applicable to optical signal detection and material property monitoring.