Search

Hafnium oxide (HfO2) multilayer films were prepared on a glass substrate by pulsed laser deposition, and a novel middle metal layer of Cu40Ag60 was developed. The influence of CuAg thickness and substrate temperature on structural, optical, electrical and morphological characteristics of HfO2/CuAg/HfO2 films were carefully investigated. Multilayer films with different CuAg thickness deposited at room temperature exhibit amorphous structures. As the CuAg thickness varies from 4 to 24 nm, the visible transmittance is kept between 63 and 80%, while the near-infrared transmittance and sheet resistance undergo significant reduction. Increasing the substrate temperature from 100 ℃ to 350 ℃ induces the transformation of HfO2 from amorphous to the crystalline structure, while the near-infrared transmittance and sheet resistance gradually increase. HfO2(50 nm)/CuAg(16 nm)/HfO2(50 nm) multilayer film grown at 150 ℃ exhibits optimal optical and electrical properties with the transmittance of 78.2% in the visible region, 17.7% in the near-infrared region, sheet resistance of 8.59 Ω/◻ and the highest figure of merit of 1.09 × 10–2 Ω−1, which are useful for their potential application in the field of heat mirror and optoelectronics. Furthermore, the possible mechanisms involved in obtaining low infrared transmittance and reduced sheet resistance were explored. [ABSTRACT FROM AUTHOR]