1. Laser reactive ablation deposition of silicon-nitride films
- Author
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Armando Luches, Maurizio Martino, Paolo Mengucci, Gilberto Leggieri, J. Zemek, Ion N. Mihailescu, Alessio Perrone, Guiseppe Majni, M. De Giorgi, DE GIORGI, Maria Luisa, Leggieri, Gilberto, Luches, A, Martino, M, Perrone, Alessio, Majni, G, Mengucci, P, Zemek, J, Mihailescu, I. N., G., Leggieri, A., Luche, Martino, Maurizio, G., Majni, P., Mengucci, J., Zemek, and I. N., Mihailescu
- Subjects
Auger electron spectroscopy ,Laser ablation ,Silicon ,Scanning electron microscope ,Chemistry ,Analytical chemistry ,chemistry.chemical_element ,General Chemistry ,Rutherford backscattering spectrometry ,chemistry.chemical_compound ,X-ray photoelectron spectroscopy ,Silicon nitride ,General Materials Science ,Thin film - Abstract
Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.
- Published
- 1995
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