Author: "M.K. Lee" / Journal: applied physics a: materials science & processing - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "M.K. Lee" Journal applied physics a: materials science & processing

Author: C.C. Hu and M.K. Lee
Subjects: Photoluminescence, business.industry, Chemistry, Flatness (systems theory), Inorganic chemistry, General Chemistry, Chemical vapor deposition, Atomic units, Condensed Matter::Materials Science, Full width at half maximum, chemistry.chemical_compound, Optoelectronics, General Materials Science, Metalorganic vapour phase epitaxy, business, Layer (electronics), Phosphine
Abstract: From observations with an atomic force microscope, the flatness of InP homoepitaxial layer is improved to atomic scale by phosphine modulation metalorganic chemical vapor deposition. A full width at half maximum of 5.6 meV for photoluminescence at 77 K can be achieved under optimum growth conditions. The satellite peak around the near band emission can also be reduced to a negligible quantity under optimum growth conditions.
Published: 1997

Author: M.K. Lee, C.M. Shih, and W.H. Shieh
Subjects: *SILICON, *BORIC acid
Abstract: Describes a study which reported that high-refractive-index and high-dielectric-constant films can be deposited on silicon substrates through a solution of hexafluorotitanic and boric acid. Details of experimental procedures; Results and discussion; Conclusion.
Published: 2002
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