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SiO[sub 2] composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size. [ABSTRACT FROM AUTHOR]

Cu nanowire arrays have been synthesized using potentiostatic electrodeposition within the confined nanochannels of a porous anodic alumina membrane. The Cu nanowire arrays and the individual nanowires have been characterized using SEM, TEM, SAED, HREM and XRD. Investigation results reveal that the Cu nanowire arrays having high wire packing densities are highly ordered over large areas. The individual Cu nanowires (diameter ∼60 nm) were single-crystal and found to be dense and continuous with uniform diameters throughout their entire length. An optimum ECD condition (at lower overpotentials) for the synthesis of single-crystal Cu nanowires was also discussed. [ABSTRACT FROM AUTHOR]

A large quantity of nanowires and nanotubes of silicon oxide are produced by using Fe–Co–Ni alloy nanoparticles as catalyst. The products have a uniform diameter of around 100 nm. The nanowires have a smooth surface and the lengths are up to 100 μm or more. A new morphology called a serrated joint nanotube was found. The alloy catalyst plays a key role in the synthesis process. Room-temperature photoluminescence measurement under excitation at 360 nm showed that the silicon oxide had a strong blue-green emission at 525 nm (about 2.36 eV), which may be related to oxygen defects. [ABSTRACT FROM AUTHOR]

Crystalline aSi3N4 nanowires were simply prepared by heating a silicon wafer at 1250 °C in a flowing NH3 and N2 atmosphere. The obtained nanowires are straight and uniform with diameters of 30-100 nm and of lengths up to tens of microns. The possible reactions in the synthesis process are discussed. The growth mechanism of the nanowires is vapor-solid (VS) process. [ABSTRACT FROM AUTHOR]