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We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley–Read–Hall model to study these process. First, we investigate the current–voltage characteristics of a graphone p–n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study.

The cavity quantum electrodynamics of various complex systems is here analyzed using a general versatile code developed in this research. Such quantum multi-partite systems normally consist of an arbitrary number of quantum dots in interaction with an arbitrary number of cavity modes. As an example, a nine-partition system is simulated under different coupling regimes, consisting of eight emitters interacting with one cavity mode. Two-level emitters (e.g. quantum dots) are assumed to have an arrangement in the form of a linear chain, defining the mutual dipole–dipole interactions. It was observed that plotting the system trajectory in the phase space reveals a chaotic behavior in the so-called ultrastrong-coupling regime. This result is mathematically confirmed by detailed calculation of the Kolmogorov entropy, as a measure of chaotic behavior. In order to study the computational complexity of our code, various multi-partite systems consisting of one to eight quantum dots in interaction with one cavity mode were solved individually. Computation run times and the allocated memory for each system were measured.

We show a methodology for how to construct Dirac points that occur at the corners of Brillouin zone as the Photonic counterparts of graphene. We use a triangular lattice with circular holes on a silicon substrate to create a Coupled Photonic Crystal Resonator Array (CPCRA) which its cavity resonators play the role of carbon atoms in graphene. At first we draw the band structure of our CPCRA using the tight-binding method. For this purpose we first designed a cavity which its resonant frequency is approximately at the middle of the first H-polarization band gap of the basis triangular lattice. Then we obtained dipole modes and magnetic field distribution of this cavity using the Finite Element Method (FEM). Finally we drew the two bands that construct the Dirac points together with the frequency contour plots for both bands and compared with the Plane Wave Expansion (PWE) and FEM results to prove the existence of Dirac point in the H-polarization band structure of lattices with air holes.