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Low-pressure rf plasmas have been applied for etching of ultra-low-k SiCOH wafers using an Oxford Plasmalab System 100. In pure CF plasmas, SiCOH layers have been etched for different power values. Using quantum cascade laser absorption spectroscopy in the mid-infrared spectral range, the correlation of online and in situ measured concentrations of two etching products, CO and SiF, with the ex situ determined etching rates has been studied. The concentration of SiF was found to range between 0.6 and 1.4 × 10 molecules cm. In contrast the concentrations of CO were measured to be only about 50 % of the SiF density with 7 × 10 molecules cm in maximum. The production rate of SiF, determined from the time behavior of its concentration after plasma ignition, was found to be between 1 and 5 × 10 cm s. The etching rates varied between 2 and 7 nm s. Both parameters increase nearly linearly with the applied rf power. It was found that for power values of up to 1.1 kW, the etching rate depends nearly linearly on the in situ monitored concentrations of both etching products. Therefore, the concentration of the etching products can be directly used as a measure of the etching rate. [ABSTRACT FROM AUTHOR]

Quantum cascade lasers (QCLs) have attracted considerable interest as an alternative tuneable narrow bandwidth light source in the mid-infrared spectral range for chemical sensing. Pulsed QCL spectrometers are often used with short laser pulses and a bias current ramp similar to diode laser spectroscopy. Artefacts in the recorded spectra such as disturbed line shapes or underestimated absorption coefficients have been reported. A detailed time-resolved high-bandwidth analysis of individual pulses during a laser sweep has been performed. Quantitative results for CH absorption features around 1347 cm (7.42 μm) fell short of the expected values for reasonable operating conditions of the QCL. The origin of the artefacts using short pulses was identified to be partly of the same nature as in the case of long laser pulses. A complex combination with the tuning principle was found, leading to an apparently increased instrumental broadening (effective line width) and underestimated concentrations at low-pressure conditions. [ABSTRACT FROM AUTHOR]

Within the last decade mid-infrared absorption spectroscopy between 3 and 20 μm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry of molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has lead to further applications of IRLAS because most of these compounds and their decomposition products are infrared active. IRLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetics. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of QCLs offers an attractive new option for the monitoring and control of industrial plasma processes as well as for highly time-resolved studies on the kinetics of plasma processes. The aim of the present article is twofold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas using TDLs and (ii) to report on selected new applications of QCLs in the mid-infrared. [ABSTRACT FROM AUTHOR]