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This paper investigated the use of semipolar InGaN/GaN multiple quantum well based micro-photodetectors (μPDs) as the optical receiver for visible light communication (VLC). The fabricated semipolar μPDs exhibited a low dark current of 1.6 pA at −10 V, a responsivity of 0.191 A W−1, and a −3 dB modulation bandwidth of 347 MHz. A high data rate of up to 1.55 Gbit s−1 was achievable by utilizing the extended bandwidth of more than −10 dB, and based on a straight-forward non-return-to-zero on–off keying modulation scheme. This development demonstrated the feasibility of wavelength-selective detection scheme using semipolar μPD for high-data-capacity VLC systems.

Micro-light-emitting-diodes (?LEDs) with size-independent peak external quantum efficiency behavior was demonstrated from 10×10 ?malt;supagt;2alt;/supagt; to 100×100 ?malt;supagt;2alt;/supagt; by employing a combination of chemical treatment and atomic-layer deposition (ALD) sidewall passivation. The chemical treatment and sidewall passivation improved the ideality factors of ?LEDs from 3.4 to 2.5. The results from the combination of chemical treatment and ALD sidewall passivation suggest the issue of size dependent efficiency can be resolved with proper sidewall treatments after dry etching.

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ~15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.